2019

  1. Махвиладзе, Т.М. Моделирование влияния структуры межзеренной границы на эффективные заряды ионов в процессах электромиграции / Махвиладзе Т.М., Сарычев М.Е. // Микроэлектроника. 2019. Т.48. №6. С. 430–438. DOI: 10.1134/S0544126919050077) 
  2. Marukhin, N.V. Contact resistance and lifecycle of an ohmic MEMS switch with single and multiple contact bumps / Marukhin N.V.,Uvarov I.V. // J. Phys.: Conference Series, 2019, Vol. 1410, 012205 DOI:10.1088/1742-6596/1410/1/012205
  3. Melnikov, A.A. Hitting time for quantum walks of identical particles / Melnikov A.A., Alodjants A.P., Fedichkin L.E. // Proceedings of SPIE – The International Society for Optical Engineering – V. 11022 – 2019 – 110222J. DOI: 10.1117/12.2521982 
  4. Miakonkikh, A. Experimental study silicon low-dimensional structures for generation of THz radiation / A.Miakonkikh, A.Rogozhin, P.Solyankin, K.Rudenko // ITM Web of Conferences 30, 08012 (2019). DOI: 10.1051/itmconf/20193008012 
  5. Miakonkikh, A.V. Anisotropic plasma etching of Silicon in gas chopping process by alternating steps of oxidation and etching / Miakonkikh A.V., Averkin S.N., Rudenko K.V. // Journal of Physics: Conference Series, 2019, 1243(1) 12009, DOI: 10.1088/1742-6596/1243/1/012009 
  6. Miakonkikh, A.V. Deep Silicon Plasma Etching: Selection of Processes for Different Applications / Miakonkikh A.V., Averkin S.N., Rudenko K.V., Lukichev V.F. // Proceedings of SPIE. 2019. Том: 11022. Номер статьи: UNSP 110221X. – International Conference on Micro- and Nano-Electronics. OCT 01-05, 2018. Zvenigorod, RUSSIA. – DOI: 10.1117/12.2522505 
  7. Miakonkikh, A.V. Measurement of the gas temperature of neutrals in reactive plasmas by moderate-resolution OES / Miakonkikh A.V., Rudenko K.V. // 15TH HIGH-TECH PLASMA PROCESSES CONFERENCE (HTPP15) – Journal of Physics Conference Series – V.: 1243 – 012005 – DOI: 10.1088/1742-6596/1243/1/012005 
  8. Mironenko, A.A. Charge-discharge performances of the Si-O-Al electrodes / Mironenko A.A., Fedorov I.S., Rudy A.S., Andreev V.N., Gryzlov D.Y., Kulova .TL., Skundin A.M. // Monatshefte fur Chemie – Chemical Monthly – 2019, V.150, 10, pp 1753–1759. DOI: 10.1007/s00706-019-02497-1 
  9. Morozov, O.V. Determination of vibration axes of the micromachined ring resonator for the modal tuning purposes / Morozov O.V., Uvarov I.V. // Proceedings of SPIE – The International Society for Optical Engineering – V. 11022 – 2019 – 110220W. DOI: 10.1117/12.2521123 
  10. Ovcharov, V.V. Localization of a thermo-optical traveling wave at an optical inhomogeneity in a silicon wafer under lamp-based heating / V.V.Ovcharov, V.P.Prigara, A.L.Kurenja, V.I.Rudakov. // Proceedings of SPIE. Том: 11022. Номер статьи: UNSP 110221V. DOI: 10.1117/12.2521465 
  11. Ozhigov, Y.I. Quantum lock on dark states // INTERNATIONAL CONFERENCE ON MICRO- AND NANO-ELECTRONICS 2018 – Proceedings of SPIE – V.: 11022 – 110222D. DOI: 10.1117/12.2523571 
  12. Paporkov, V.A. Magnetooptical Response of Metallized Nanostructural Arrays with a Complex Relief on the Surface of Silicon Wafers / Paporkov V.A., Prokaznikov A.V. // Russian Microelectronics – V. 48 – 1 – 2019 – pp. 43-58. DOI: 10.1134/S1063739719010086
  13. Папорков, В.А. Магнитооптический отклик массивов металлизированных наноструктур со сложным рельефом на поверхности кремниевых пластин / Папорков В.А., Показников В.А. //Микроэлектроника, 2019, т. 48, № 1, с. 63-78. DOI: 0.1134/S1063739719010086 
  14. Permyakova, О.О. The effect of ion implantation and annealing on forming process in Al2O3/HfO2/Al2O3 memristor structure / O.O.Permyakova, A V Miakonkikh, K.V.Rudenko, A.E.Rogozhin // Journal of Physics: Conference Series 1410 (2019) 012210 IOP Publishing, doi:10.1088/1742-6596/1410/1/012210 
  15. Popov, A.A. Influence of Power and Pulsed Regime of Low Frequency Discharge on Clusters Incorporation in Dielectric Films for ReRam Application / Popov A.A., Berdnikov A.E.// INTERNATIONAL CONFERENCE ON MICRO- AND NANO-ELECTRONICS 2018 – Proceedings of SPIE – V.: 11022 – 1102218 DOI:10.1117/12.2521784 
  16. Popov, V. Ferroelectric properties of SOS and SOI pseudo-MOSFETs with HfO2 interlayers./ Popov V. , M.Ilnitsky, V.Antonov, V.Vdovin, I.Tyschenko, A.Miakonkikh, K.Rudenko // Sol. State Electron., vol. 159, pp. 63-70, (2019). DOI: 10.1016/j.sse.2019.03.036 
  17. Popov, V.P. Hafnia and alumina stacks as UTBOXs in silicon-on insulator structures. / Popov V.P., Antonov V.A., Tyschenko I.E., Vdovin V.I., Gutakovskii A.K., Miakonkikh A.V., Rudenko K.V. // Sol. State Electron., accepted (2019) DOI:10.1016/j.sse.2019.107734 
  18. Prigara, V.P. Induced bistability into quartz glass by silicon wafer heat treatment in lamp-based reactor / V.P. Prigara, V.V. Ovcharov // SPIE Proceedings of the International Conference “Micro- and Nanoelectronics – 2018” (October 1-5, 2018, Zvenigorod, Russia). DOI: 10.1117/12.2521891 
  19. Privezentsev, V.V. Changes in the Structure and Properties of Quartz Successively Implanted by Zn and F Ions during Thermal Annealing / Privezentsev V.V., Steinman E.A., Tereshchenko A.N., Kolesnikov N.N., Makunin A.V. // CRYSTALLOGRAPHY REPORTS – V.: 64 – 3 – pp.: 451-456. DOI: 10.1134/S1063774519030210 
  20. Privezentsev, V.V. Defect structure and properties of Zn diffusion doped Si after swift Xe ion irradiation / Privezentsev V.V., Skuratov V.A., Kulikauskas V.S., Burmistrov A.A., Zilova O.S., Steinman E.A., Tereshchenko A.N. Kiselev D.A., Tabachkova N.Y., Shcherbachev K.D. // 19TH INTERNATIONAL CONFERENCE ON EXTENDED DEFECTS IN SEMICONDUCTORS (EDS2018) – Journal of Physics Conference Series – V.: 1190 – 012011. DOI: 10.1088/1742-6596/1190/1/012011 
  21. Privezentsev, V.V. Ion-Track Modification of a Silicon-Dioxide Film Implanted with Zinc Ions and Annealed in Oxygen / Privezentsev V.V., Palagushkin A.N., Skuratov V.A., Kulikauskas V.S., Zatekin V.V., Makunin A.V., Kiselev D.A., Steinman E.A., Tereshehenko A.N. // JOURNAL OF SURFACE INVESTIGATION – V.: 13 – 2 – pp.: 326-334. DOI: 10.1134/S102745101902037X 
  22. Privezentsev, V.V. Modification of Structure and Properties of Near-Surface Layer of Zn-Implanted Si Depending on Irradiation Fluence of 132Xe26+ Ions with Energy of 167 MeV. / V.V.Privezentsev, V.S.Kulikauskas, V.A.Skuratov, O.S.Zilova, A.A.Burmistrov, M.Yu.Presnyakov, A.V.Goryachev. // Semiconductors, 2019, Vol. 53, No. 3, p. 313. doi: 10.1134/S1063782619030163 
  23. Privezentsev, V.V. Modification of Zn ion hot implanted Si by swift Xe ion irradiation / Privezentsev V.V., Skuratov V.A., Kulikauskas V.S., Zilova O.S., Burmistrov A.A., Tabachkova N.Y., Eidelman K.B., Shcherbachev K.D. // Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms – V. 460 – 2019 – pp. 56-59. DOI: 10.1016/j.nimb.2019.01.040 
  24. Privezentsev, V.V. Nanovoid Formation in Polymethylmetacrylate Film by Swift Heavy Ion Irradiation / Privezentsev V., Palagushkin A., Skuratov V., Kulikauskas V., Kiselev D. // STATE-OF-THE ART TRENDS OF SCIENTIFIC RESEARCH OF ARTIFICIAL AND NATURAL NANOOBJECTS (STRANN-2018) – AIP Conference Proceedings – V.: 2064 – 030014. DOI: 10.1063/1.5087676 
  25. Privezentsev, V.V. Structure and Properties of Zn-Implanted Si Near-Surface Layer Modification Depending on Irradiation Fluence of Xe-132(26+) Ions with Energy of 167 MeV / Privezentsev V.V., Kulikauskas V.S., Skuratov V.A., Zilova O.S., Burmistrov A.A., Presnyakov M.Y., Goryachev A.V. // SEMICONDUCTORS – V.: 53 – 3 – pp.: 313-320. DOI: 10.1134/S1063782619030163 
  26. Privezentsev, V.V. Study of a SiO2/Si Structure Implanted with 64Zn+ and 16O+ Ions and Heat Treated in a Neutral/Inert Environment. / V.V.Privezentsev, V.S.Kulikauskas, V.V.Zatekin, V.I.Zinenko, Yu.A.Agafonov, V.K.Egorov, E.A.Steinman, A.N.Tereshchenko, K.D.Shcherbachev. // Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques, 2019, Vol. 13, No. 3, p. 382-386. DOI: 10.1134/S1027451019030169 
  27. Privezentsev, V.V. Studying a Silica Film Implanted with Zn and Irradiated with Swift Xe Ions / Privezentsev V.V., Palagushkin A.N., Skuratov V.A., Kulikauskas V.S., Zatekin V.V., Zilova O.S., Burmistrov A.A., Kiselev D.A., Steinman E.A., Tereshchenko A.N. // Bulletin of the Russian Academy of Sciences: Physics – V. 83 – 11 – 2019 – pp. 1332-1339. DOI: 10.3103/S1062873819110194 
  28. Prokaznikov, A.V. Different magnetooptical properties of metallized nanostructured arrays on silicon surface / Prokaznikov A.V., Paporkov V.A., Zvezdin N.Yu. // Proceedings of SPIE, v. 11022, International Conference on Micro- and Nano- Electronics, 2018, 11022 1K (2019) 12 p., DOI: 10.1117/12.2520304 
  29. Rogozhin, A.E. Detailed Monte-Carlo simulation of PMMA chain scissions in e-beam lithography / Rogozhin A.E., Sidorov F.A. // Journal of Physics: CS 1410 (2019) 012243 DOI:10.1088/1742-6596/1410/1/012243 
  30. Rogozhin, A.E. Fabrication and properties of SOI-based planar silicon nanowire arrays / Rogozhin A.E., Miakonkikh A.V., Tatarintsev A.A., Rudenko K.V. // Proceedings of SPIE. 2019. 11022. UNSP 1102222. DOI: 10.1117/12.2522457 
  31. Rogozhin, A.E. Simulation of dry e-beam etching of resist and experimental evidence / Rogozhin A., F.Sidorov, M.Bruk, E.Zhikharev // Proc. SPIE 11022 110221O (2019) DOI: 10.1117/12.2522458 
  32. Rudenko, M. Monte Carlo Simulation of Defects of a Trench Profile in the Process of Deep Reactive Ion Etching of Silicon / Rudenko M.K., Myakon’kikh A.V., Lukichev V.F. // Russian Microelectronics. 2019. 48(3), с. 157-166. DOI https://doi.org/10.1134/S1063739719030090
  33. Руденко, М. К. МОДЕЛИРОВАНИЕ МЕТОДОМ МОНТЕ КАРЛО ДЕФЕКТОВ ПРОФИЛЯ ТРЕНЧА В ПРОЦЕССЕ ГЛУБОКОГО КРИОГЕННОГО ТРАВЛЕНИЯ КРЕМНИЯ / М. К. Руденко, А. В. Мяконьких, В. Ф. Лукичев // Микроэлектроника. 2019. Т.48. No 3. С.1-10. – DOI: 10.1134/S0544126919030098 
  34. Rudenko, M. Sidewall defects in deep cryogenic Si etching in SF6/O2 plasma: A numerical simulation / Rudenko M., Miakonkikh A., Kurbat D., Lukichev V. // Proceedings of SPIE 2019, 11022 , 110221Y, DOI: 10.1117/12.2522414 
  35. Semenikhin, I. Efficient method for the solution of Maxwell’s equations for nanostructured materials // ITM Web of Conferences, vol. 30, 08007, 2019. https://doi.org/10.1051/itmconf/20193008007 
  36. Seredin, B. Precision silicon doping with acceptors by temperature gradient zone melting / B.M.Seredin, V.V.Kuznetsov, A A.Lomov, A.N.Zaichenko, S.Yu.Martyushov // Journal of Physics: Conference Series. 1400 (2019) 044012. – DOI: 10.1088/1742-6596/1400/4/044012
  37. Shlepakov, P.S. Degradation of Titanium Electrodes in the Alternating Polarity Electrolysis / Shlepakov P.S., Uvarov I.V., Naumov V.V., Mazaletskiy L.A., Svetovoy V.B. // INTERNATIONAL JOURNAL OF ELECTROCHEMICAL SCIENCE – 2019 – V.: 14 – 6 – pp.: 5211-5225. DOI: 10.20964/2019.06.62
  38. Sinitsyn, D.O. Optimization of the Navigated TMS Mapping Algorithm for Accurate Estimation of Cortical Muscle Representation Characteristics / Sinitsyn D.O., Chernyavskiy A.Y., Poydasheva A.G., Bakulin I.S., Suponeva N.A., Piradov M.A // BRAIN SCIENCES – 2019 – V.: 9 – 4 – 88. DOI: 10.3390/brainsci9040088 
  39. Sobolev, N.A. Dislocation-Related Photoluminescence in Silicon Implanted with Germanium Ions / Sobolev N.A., Kalyadin A.E., Sakharov V.I., Serenkov I.T., Shek E.I., Parshin E.O., Melesov N.S., Simakin C.G. // SEMICONDUCTORS – V.: 53 – 2 – pp. 156-159. DOI: 10.1134/S1063782619020234
  40. Sobolev, N.A. Influence of Annealing Temperature on Electrically Active Centers in Silicon Implanted with Germanium Ions / Sobolev N.A., Aleksandrov O.V., Sakharov V.I., Serenkov I.T., Shek E.I., Kalyadin A.E., Parshin E.O., Melesov N.S. // SEMICONDUCTORS – V.53 – 2 – pp.: 153-155. DOI: 10.1134/S1063782619020222
  41. Sokolov, V.N. Computer Analysis of AFM Images of a Silicon Surface Implanted with Zinc Ions and Oxidized at Elevated Temperatures / Sokolov V.N., Razgulina O.V., Privezentsev V.V., Ksenich S.V. // JOURNAL OF SURFACE INVESTIGATION – V.13 – 4 – pp.: 734-739. DOI: 10.1134/S1027451019040360 
  42. Tatarintsev, A.A. Charging and domain switching in ferroelectrics LiNbO3 by electron beam / Tatarintsev A.A., Markovets K.E., Rau E.I. // JOURNAL OF PHYSICS D-APPLIED PHYSICS – V.: 52 – 11 – 115104 DOI: 10.1088/1361-6463/aafbfc 
  43. Trushin, O.S. Energetics of domain wall in magnetic nanowire / O.S.Trushin, E.Granato, S.C.Ying // Proceedings of SPIE. 2019. 11022. UNSP 110221L. DOI: 10.1117/12.2521401 
  44. Trushin, O.S. Energetics of domain wall in magnetic nanowire / Trushin O.S.;Вarabanova N.I. // Journal of Physics: Conf. Ser. 2019, V. 1389, P. 012003 DOI:10.1088/1742-6596/1389/1/012003 
  45. Tsukanov, A.V. A photon source based on the quantum well/dot structure in a microcavity / Tsukanov A.V., Kateev I.Yu // LASER PHYSICS LETTERS – 2019 – V.: 16 – 5 – 056201. DOI: 10.1088/1612-202X/ab0a5a 
  46. Tsukanov, A.V. Measurement of a charge qubit using a single-electron transistor based on a triple quantum dot // PHYSICAL REVIEW A/ 2019. V. 100, 6, 062305. DOI: 10.1103/PhysRevA.100.062305 
  47. Uvarov, I.V. A fast electrochemical actuator in the non-explosive regime / Uvarov I.V., Melenev A.E., Lokhanin M.V., Naumov V.V., Svetovoy V.B. // JOURNAL OF MICROMECHANICS AND MICROENGINEERING- 2019- V. 29 – 11 – 114001. DOI: 10.1088/1361-6439/ab3bde 
  48. Uvarov, I.V. Contact resistance and lifecycle of a single- and multiple-contact MEMS switch / Uvarov I.V., Marukhin N.V., Naumov V.V. // MICROSYSTEM TECHNOLOGIES-MICRO-AND NANOSYSTEMS-INFORMATION STORAGE AND PROCESSING SYSTEMS – 2019 – V. 25 – 11 – pp. 4135-4141. DOI: 10.1007/s00542-018-4279-2 
  49. Uvarov, I.V. Reliability of platinum contacts in a cold operated MEMS switch / Uvarov I.V., Kupriyanov A.N // Journal of Physics: Conference Series – V. 1319 – 1 – 2019 – 012001. DOI: 10.1088/1742-6596/1319/1/012001 
  50. Uvarov, I.V. Stiction-protected MEMS switch with low actuation voltage / Uvarov I.V., Kupriyanov A.N. // Microsystem Technologies. 2019. V.: 25 – 8 – pp.: 3243-3251. DOI: 10.1007/s00542-018-4188-4 
  51. Uvarov, I.V. A low actuation voltage MEMS switch with protection against stiction / Uvarov I.V., Kupriyanov A.N. // INTERNATIONAL CONFERENCE ON MICRO- AND NANO-ELECTRONICS 2018 – Proceedings of SPIE. 2019. V.: 11022 – 110220P. DOI:10.1117/12.2520838 
  52. Vakulov, Z. Dissociation and synthesis of target components during laser ablation of LiNbO3 / Z.Vakulov, E.G.Zamburg, V.S.Klimin, A.V.Miakonkikh, I.E .Clemente, K.V.Rudenko, O.A.Ageev // Journal of Physics: Conference Series 1410 (2019) 012050, doi:10.1088/1742-6596/1410/1/012050 
  53. Vakulov, Z.E. Influence of Pulsed Laser Deposition Modes on Properties of Nanocrystalline LiNbO3 Films / Vakulov Z.E., Varzarev Y.N., Gusev E.Y., Skrylev A.V., Panich A.E., Miakonkikh A.V., Klemente I.E., Rudenko K.V., Konoplev B.G., Ageev O.A.// Russian Microelectronics – V. 48 – 2 – 2019 – pp. 59-65. DOI: 10.1134/S1063739719020094 
  54. Vintskevich, S.V. Effect of an incoherent pump on two-mode entanglement in optical parametric generation / Vintskevich S.V., Grigoriev D.A., Filippov S.N. // PHYSICAL REVIEW A – 2019 – V.100 – 5 – 053811. DOI: 10.1103/PhysRevA.100.053811 
  55. Volodin, V.A. Crystallization of Amorphous Germanium Films and Multilayer a-Ge/a-Si Structures upon Exposure to Nanosecond Laser Radiation / Volodin V.A. Krivyakin G.K., Ivlev G.D., Prokopyev S.L., Gusakova S.V., Popov A.A. // SEMICONDUCTORS – V.: 53 – 3 – pp.: 400-405. DOI: 10.1134/S1063782619030217

Страницы: 1 2 3 4 5

Добавить комментарий

Ваш адрес email не будет опубликован. Обязательные поля помечены *

Этот сайт использует Akismet для борьбы со спамом. Узнайте, как обрабатываются ваши данные комментариев.